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Creators/Authors contains: "Mitchell, J W"

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  1. ; ; ; ; ; ; ; (, Applied Physics Letters)
    We have investigated the influence of non-stoichiometry and local atomic environments on carrier transport in GaAs(N)Bi alloy films using local-electrode atom probe tomography (LEAP) in conjunction with time-resolved terahertz photoconductivity measurements. The local concentrations of N, Bi, and excess As, as well as Bi pair correlations, are quantified using LEAP. Using time-resolved THz photoconductivity measurements, we show that carrier transport is primarily limited by excess As, with the highest carrier mobilities for layers with yBi > 0.035. 
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  2. ; ; ; ; ; ; ; (, Applied Physics Letters)
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